Fabrication of Sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process

L. N. Sun, T. M. H. Lee, Z. C. Yang, G. Z. Yan. Fabrication of Sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process. In 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, January 20-23, 2010. pages 971-974, IEEE, 2010. [doi]

@inproceedings{SunLYY10,
  title = {Fabrication of Sub-100-nm silicon nanowire devices on SOI wafer by CMOS compatible fabrication process},
  author = {L. N. Sun and T. M. H. Lee and Z. C. Yang and G. Z. Yan},
  year = {2010},
  doi = {10.1109/NEMS.2010.5592606},
  url = {http://dx.doi.org/10.1109/NEMS.2010.5592606},
  researchr = {https://researchr.org/publication/SunLYY10},
  cites = {0},
  citedby = {0},
  pages = {971-974},
  booktitle = {5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, January 20-23, 2010},
  publisher = {IEEE},
}