Cheng-Lin Sung, Hang-Ting Lue, Wei-Chen Chen, Tzu-Hsuan Hsu, Keh-Chung Wang, Chih-Yuan Lu. First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]
@inproceedings{SungLCHWL21,
title = {First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits},
author = {Cheng-Lin Sung and Hang-Ting Lue and Wei-Chen Chen and Tzu-Hsuan Hsu and Keh-Chung Wang and Chih-Yuan Lu},
year = {2021},
doi = {10.1109/IMW51353.2021.9439626},
url = {https://doi.org/10.1109/IMW51353.2021.9439626},
researchr = {https://researchr.org/publication/SungLCHWL21},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021},
publisher = {IEEE},
isbn = {978-1-7281-8517-0},
}