Cheng-Lin Sung, Hang-Ting Lue, Wei-Chen Chen, Tzu-Hsuan Hsu, Keh-Chung Wang, Chih-Yuan Lu. First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits. In IEEE International Memory Workshop, IMW 2021, Dresden, Germany, May 16-19, 2021. pages 1-4, IEEE, 2021. [doi]
Abstract is missing.