A Novel Monitoring Method of RF Characteristics Variations for Sub-0.1μm MOSFETs with Precise Gate-resistance Model

Akira Tanabe, Ken'ichiro Hijioka, Yoshihiro Hayashi. A Novel Monitoring Method of RF Characteristics Variations for Sub-0.1μm MOSFETs with Precise Gate-resistance Model. In Proceedings of the IEEE 2006 Custom Integrated Circuits Conference, CICC 2006, DoubleTree Hotel, San Jose, California, USA, September 10-13, 2006. pages 725-728, IEEE, 2006. [doi]

Abstract

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