Tomoharu Tanaka, Mark Helm, Tommaso Vali, Ramin Ghodsi, Koichi Kawai, Jae-Kwan Park, Shigekazu Yamada, Feng Pan, Yuichi Einaga, Ali Ghalam, Toru Tanzawa, Jason Guo, Takaaki Ichikawa, Erwin Yu, Satoru Tamada, Tetsuji Manabe, Jiro Kishimoto, Yoko Oikawa, Yasuhiro Takashima, Hidehiko Kuge, Midori Morooka, Ali Mohammadzadeh, Jong Kang, Jeff Tsai, Emanuele Sirizotti, Eric Lee, Luyen Vu, Yuxing Liu, Hoon Choi, Kwonsu Cheon, Daesik Song, Daniel Shin, Jung-Hee Yun, Michele Piccardi, Kim-Fung Chan, Yogesh Luthra, Dheeraj Srinivasan, Srinivasarao Deshmukh, Kalyan Kavalipurapu, Dan Nguyen, Girolamo Gallo, Sumant Ramprasad, Michelle Luo, Qiang Tang, Michele Incarnati, Agostino Macerola, Luigi Pilolli, Luca De Santis, Massimo Rossini, Violante Moschiano, Giovanni Santin, Bernardino Tronca, Hyunseok Lee, Vipul Patel, Ted Pekny, Aaron Yip, Naveen Prabhu, Purval Sule, Trupti Bemalkhedkar, Kiranmayee Upadhyayula, Camila Jaramillo. 7.7 A 768Gb 3b/cell 3D-floating-gate NAND flash memory. In 2016 IEEE International Solid-State Circuits Conference, ISSCC 2016, San Francisco, CA, USA, January 31 - February 4, 2016. pages 142-144, IEEE, 2016. [doi]
Abstract is missing.