Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation

Hongwei Tang, Fuyou Liao, Xinzhi Zhang, Jianan Deng, Jing Wan, Wenzhong Bao. Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation. In 13th IEEE International Conference on ASIC, ASICON 2019, Chongqing, China, October 29 - November 1, 2019. pages 1-4, IEEE, 2019. [doi]

Abstract

Abstract is missing.