Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs

A. F. Tasch Jr., Laureen H. Parker. Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs. Proceedings of the IEEE, 77(3):374-388, 1989. [doi]

Abstract

Abstract is missing.