Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay - researchr publication authors

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Atsushi Teranishi, Kaoru Shizuno, Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama. Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay. IEICE Electronic Express, 9(5):385-390, 2012. [doi]

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