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Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay

Atsushi Teranishi, Kaoru Shizuno, Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama. Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay. IEICE Electronic Express, 9(5):385-390, 2012. [doi]

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