Investigation of DC Characteristic on DG-Tunnel FET with High-K Dielectric Using Distinct Device Parameter

Shraddha Thakre, Ankur Beohar, Vikas Vijayvargiya, Nandakishor Yadav, Santosh Kumar Vishvakarma. Investigation of DC Characteristic on DG-Tunnel FET with High-K Dielectric Using Distinct Device Parameter. In IEEE International Symposium on Nanoelectronic and Information Systems, iNIS 2016, Gwalior, India, December 19-21, 2016. pages 124-128, IEEE, 2016. [doi]

Abstract

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