On the Reliability of In-Memory Computing: Impact of Temperature on Ferroelectric TCAM

Simon Thomann, Chao Li, Cheng Zhuo, Om Prakash 0007, Xunzhao Yin, Xiaobo Sharon Hu, Hussam Amrouch. On the Reliability of In-Memory Computing: Impact of Temperature on Ferroelectric TCAM. In 39th IEEE VLSI Test Symposium, VTS 2021, San Diego, CA, USA, April 25-28, 2021. pages 1-6, IEEE, 2021. [doi]

@inproceedings{ThomannLZ0YHA21,
  title = {On the Reliability of In-Memory Computing: Impact of Temperature on Ferroelectric TCAM},
  author = {Simon Thomann and Chao Li and Cheng Zhuo and Om Prakash 0007 and Xunzhao Yin and Xiaobo Sharon Hu and Hussam Amrouch},
  year = {2021},
  doi = {10.1109/VTS50974.2021.9441038},
  url = {https://doi.org/10.1109/VTS50974.2021.9441038},
  researchr = {https://researchr.org/publication/ThomannLZ0YHA21},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {39th IEEE VLSI Test Symposium, VTS 2021, San Diego, CA, USA, April 25-28, 2021},
  publisher = {IEEE},
  isbn = {978-1-6654-1949-9},
}