A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS - researchr publication authors

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Sidharth Thomas, Sam Razavian, Wei Sun, Benyamin Fallahi Motlagh, Anthony D. Kim, Yu Wu, Benjamin S. Williams, Aydin Babakhani. A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS. J. Solid-State Circuits, 58(9):2407-2420, September 2023. [doi]

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