A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS

Sidharth Thomas, Sam Razavian, Wei Sun, Benyamin Fallahi Motlagh, Anthony D. Kim, Yu Wu, Benjamin S. Williams, Aydin Babakhani. A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS. J. Solid-State Circuits, 58(9):2407-2420, September 2023. [doi]

@article{ThomasRSMKWWB23,
  title = {A 0.4-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS},
  author = {Sidharth Thomas and Sam Razavian and Wei Sun and Benyamin Fallahi Motlagh and Anthony D. Kim and Yu Wu and Benjamin S. Williams and Aydin Babakhani},
  year = {2023},
  month = {September},
  doi = {10.1109/JSSC.2023.3289129},
  url = {https://doi.org/10.1109/JSSC.2023.3289129},
  researchr = {https://researchr.org/publication/ThomasRSMKWWB23},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {58},
  number = {9},
  pages = {2407-2420},
}