Martin Thurner, Philipp Lindorfer, Siegfried Selberherr. Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation. IEEE Trans. on CAD of Integrated Circuits and Systems, 9(11):1189-1197, 1990. [doi]
@article{ThurnerLS90,
title = {Numerical treatment of nonrectangular field-oxide for 3-D MOSFET simulation},
author = {Martin Thurner and Philipp Lindorfer and Siegfried Selberherr},
year = {1990},
doi = {10.1109/43.62756},
url = {http://doi.ieeecomputersociety.org/10.1109/43.62756},
researchr = {https://researchr.org/publication/ThurnerLS90},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
volume = {9},
number = {11},
pages = {1189-1197},
}