Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices

Ahmet Toprak, Ekmel Özbay. Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices. Microelectronics Journal, 135:105762, 2023. [doi]

Authors

Ahmet Toprak

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Ekmel Özbay

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