Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices

Ahmet Toprak, Ekmel Ă–zbay. Nonalloyed ohmic contact development with n+ InGaN regrowth method and analysis of its effect on AlGaN/GaN HEMT devices. Microelectronics Journal, 135:105762, 2023. [doi]

Abstract

Abstract is missing.