Physically-based extraction methodology for accurate MOSFET degradation assessment - researchr publication authors

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Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy 0001, Gérard Ghibaudo. Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectronics Reliability, 55(9-10):1417-1421, 2015. [doi]

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