Physically-based extraction methodology for accurate MOSFET degradation assessment

Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy 0001, Gérard Ghibaudo. Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectronics Reliability, 55(9-10):1417-1421, 2015. [doi]

@article{TorrenteCRVR0G15,
  title = {Physically-based extraction methodology for accurate MOSFET degradation assessment},
  author = {Giulio Torrente and Jean Coignus and Sophie Renard and Alexandre Vernhet and Gilles Reimbold and David Roy 0001 and Gérard Ghibaudo},
  year = {2015},
  doi = {10.1016/j.microrel.2015.06.063},
  url = {http://dx.doi.org/10.1016/j.microrel.2015.06.063},
  researchr = {https://researchr.org/publication/TorrenteCRVR0G15},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {55},
  number = {9-10},
  pages = {1417-1421},
}