Lionel Torres, Weisheng Zhao. Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design. In David Atienza, Yuan Xie, José L. Ayala, Ken S. Stevens, editors, Proceedings of the 21st ACM Great Lakes Symposium on VLSI 2010, Lausanne, Switzerland, May 2-6, 2011. pages 429-430, ACM, 2011. [doi]
@inproceedings{TorresZ11,
title = {Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design},
author = {Lionel Torres and Weisheng Zhao},
year = {2011},
doi = {10.1145/1973009.1973103},
url = {http://doi.acm.org/10.1145/1973009.1973103},
tags = {design},
researchr = {https://researchr.org/publication/TorresZ11},
cites = {0},
citedby = {0},
pages = {429-430},
booktitle = {Proceedings of the 21st ACM Great Lakes Symposium on VLSI 2010, Lausanne, Switzerland, May 2-6, 2011},
editor = {David Atienza and Yuan Xie and José L. Ayala and Ken S. Stevens},
publisher = {ACM},
isbn = {978-1-4503-0667-6},
}