Robust bias temperature instability refresh design and methodology for memory cell recovery - researchr publication authors

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Gerard Touma, Rouwaida Kanj, Rajiv V. Joshi, Ayman I. Kayssi, Ali Chehab. Robust bias temperature instability refresh design and methodology for memory cell recovery. In 2014 IEEE International Conference on IC Design & Technology, ICICDT 2014, Austin, TX, USA, May 28-30, 2014. pages 1-4, IEEE, 2014. [doi]

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