Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature

M. Tounsi, A. Oukaour, Boubekeur Tala-Ighil, H. Gualous, B. Boudart, D. Aissani. Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature. Microelectronics Reliability, 50(9-11):1810-1814, 2010. [doi]

@article{TounsiOTGBA10,
  title = {Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature},
  author = {M. Tounsi and A. Oukaour and Boubekeur Tala-Ighil and H. Gualous and B. Boudart and D. Aissani},
  year = {2010},
  doi = {10.1016/j.microrel.2010.07.059},
  url = {http://dx.doi.org/10.1016/j.microrel.2010.07.059},
  tags = {testing},
  researchr = {https://researchr.org/publication/TounsiOTGBA10},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {50},
  number = {9-11},
  pages = {1810-1814},
}