Design of an ultra-low pressure sensor based on the growth of graphene on silicon dioxide surface

Quochung Tran, Chengchen Gao, Yilong Hao. Design of an ultra-low pressure sensor based on the growth of graphene on silicon dioxide surface. In 12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017, Los Angeles, CA, USA, April 9-12, 2017. pages 526-529, IEEE, 2017. [doi]

@inproceedings{TranGH17,
  title = {Design of an ultra-low pressure sensor based on the growth of graphene on silicon dioxide surface},
  author = {Quochung Tran and Chengchen Gao and Yilong Hao},
  year = {2017},
  doi = {10.1109/NEMS.2017.8017077},
  url = {https://doi.org/10.1109/NEMS.2017.8017077},
  researchr = {https://researchr.org/publication/TranGH17},
  cites = {0},
  citedby = {0},
  pages = {526-529},
  booktitle = {12th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017, Los Angeles, CA, USA, April 9-12, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-3059-0},
}