A 1.2- to 3.3-V wide voltage-range/low-power DRAM with a charge-transfer presensing scheme

Masaki Tsukude, Shigehiro Kuge, Takeshi Fujino, Kazutami Arimoto. A 1.2- to 3.3-V wide voltage-range/low-power DRAM with a charge-transfer presensing scheme. J. Solid-State Circuits, 32(11):1721-1727, 1997. [doi]

Abstract

Abstract is missing.