Charge storage peculiarities in poly-Si-SiO::2::-Si memory devices with Si nanocrystals rich SiO::2:: - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido. Charge storage peculiarities in poly-Si-SiO::2::-Si memory devices with Si nanocrystals rich SiO::2::. Microelectronics Reliability, 45(5-6):903-906, 2005. [doi]

This author has not been identified. Look up 'V. I. Turchanikov' in GoogleThis author has not been identified. Look up 'A. N. Nazarov' in GoogleThis author has not been identified. Look up 'V. S. Lysenko' in GoogleThis author has not been identified. Look up 'Josep Carreras' in GoogleThis author has not been identified. Look up 'B. Garrido' in Google

runs on WebDSL