V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido. Charge storage peculiarities in poly-Si-SiO::2::-Si memory devices with Si nanocrystals rich SiO::2::. Microelectronics Reliability, 45(5-6):903-906, 2005. [doi]
@article{TurchanikovNLCG05,
title = {Charge storage peculiarities in poly-Si-SiO::2::-Si memory devices with Si nanocrystals rich SiO::2::},
author = {V. I. Turchanikov and A. N. Nazarov and V. S. Lysenko and Josep Carreras and B. Garrido},
year = {2005},
doi = {10.1016/j.microrel.2004.11.027},
url = {http://dx.doi.org/10.1016/j.microrel.2004.11.027},
researchr = {https://researchr.org/publication/TurchanikovNLCG05},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {45},
number = {5-6},
pages = {903-906},
}