Charge storage peculiarities in poly-Si-SiO::2::-Si memory devices with Si nanocrystals rich SiO::2:: - researchr publication

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V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido. Charge storage peculiarities in poly-Si-SiO::2::-Si memory devices with Si nanocrystals rich SiO::2::. Microelectronics Reliability, 45(5-6):903-906, 2005. [doi]

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