W. Vandendaele, X. Garros, T. Lorin, Erwan Morvan, A. Torres, René Escoffier, M.-A. Jaud, M. Plissonnier, F. Gaillard. A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 4, IEEE, 2018. [doi]
@inproceedings{VandendaeleGLMT18,
title = {A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT},
author = {W. Vandendaele and X. Garros and T. Lorin and Erwan Morvan and A. Torres and René Escoffier and M.-A. Jaud and M. Plissonnier and F. Gaillard},
year = {2018},
doi = {10.1109/IRPS.2018.8353580},
url = {https://doi.org/10.1109/IRPS.2018.8353580},
researchr = {https://researchr.org/publication/VandendaeleGLMT18},
cites = {0},
citedby = {0},
pages = {4},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5386-5479-8},
}