W. Vandendaele, X. Garros, T. Lorin, Erwan Morvan, A. Torres, René Escoffier, M.-A. Jaud, M. Plissonnier, F. Gaillard. A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. In IEEE International Reliability Physics Symposium, IRPS 2018, Burlingame, CA, USA, March 11-15, 2018. pages 4, IEEE, 2018. [doi]
Abstract is missing.