A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy

Naveen Verma, Anantha P. Chandrakasan. A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy. J. Solid-State Circuits, 43(1):141-149, 2008. [doi]

Abstract

Abstract is missing.