Elisa Vianello, Denys R. B. Ly, Selina La Barbera, Thomas Dalgaty, N. Castellani, G. Navarro, G. Bourgeois, A. Valentian, E. Nowak, Damien Querlioz. Metal Oxide Resistive Memory (OxRAM) and Phase Change Memory (PCM) as Artificial Synapses in Spiking Neural Networks. In 25th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2018, Bordeaux, France, December 9-12, 2018. pages 561-564, IEEE, 2018. [doi]
Abstract is missing.