A ±0.4°C (3σ) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2

Caspar P. L. van Vroonhoven, Dan d'Aquino, Kofi A. A. Makinwa. A ±0.4°C (3σ) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, USA, February 19-23, 2012. pages 204-206, IEEE, 2012. [doi]

Abstract

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