2-FET used as 1-transistor high-speed DRAM - researchr publication authors

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Jing Wan, Cyrille Le Royer, Alexander Zaslavsky, Sorin Cristoloveanu. 2-FET used as 1-transistor high-speed DRAM. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 197-200, IEEE, 2012. [doi]

This author has not been identified. Look up 'Jing Wan' in GoogleThis author has not been identified. Look up 'Cyrille Le Royer' in GoogleThis author has not been identified. Look up 'Alexander Zaslavsky' in GoogleThis author has not been identified. Look up 'Sorin Cristoloveanu' in Google

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