Jingcheng Wang, Hyochan An, Qirui Zhang, Hun-Seok Kim, David T. Blaauw, Dennis Sylvester. 1.03pW/b Ultra-Low Leakage Voltage-Stacked SRAM for Intelligent Edge Processors. In IEEE Symposium on VLSI Circuits, VLSI Circuits 2020, Honolulu, HI, USA, June 16-19, 2020. pages 1-2, IEEE, 2020. [doi]
Abstract is missing.