A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI

Y. Wang, Hao Cai, Lirida A. B. Naviner, X. X. Zhao, Y. Zhang, Mariem Slimani, Jacques-Olivier Klein, Weisheng Zhao. A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI. Microelectronics Reliability, 64:26-30, 2016. [doi]

Abstract

Abstract is missing.