A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI - researchr publication related

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Y. Wang, Hao Cai, Lirida A. B. Naviner, X. X. Zhao, Y. Zhang, Mariem Slimani, Jacques-Olivier Klein, Weisheng Zhao. A process-variation-resilient methodology of circuit design by using asymmetrical forward body bias in 28 nm FDSOI. Microelectronics Reliability, 64:26-30, 2016. [doi]

The following publications are possibly variants of this publication:

Optimal asymmetrical back plane biasing for energy efficient digital circuits in 28 nm UTBB FD-SOIFrancisco Veirano, Lirida A. B. Naviner, Fernando Silveira. integration, 65:211-218, 2019. [doi]

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