Analyzing static and dynamic write margin for nanometer SRAMs

Jiajing Wang, Satyanand Nalam, Benton H. Calhoun. Analyzing static and dynamic write margin for nanometer SRAMs. In Vijaykrishnan Narayanan, C. P. Ravikumar, Jörg Henkel, Ali Keshavarzi, Vojin G. Oklobdzija, Barry M. Pangrle, editors, Proceedings of the 2008 International Symposium on Low Power Electronics and Design, 2008, Bangalore, India, August 11-13, 2008. pages 129-134, ACM, 2008. [doi]

@inproceedings{WangNC08:0,
  title = {Analyzing static and dynamic write margin for nanometer SRAMs},
  author = {Jiajing Wang and Satyanand Nalam and Benton H. Calhoun},
  year = {2008},
  doi = {10.1145/1393921.1393954},
  url = {http://doi.acm.org/10.1145/1393921.1393954},
  researchr = {https://researchr.org/publication/WangNC08%3A0},
  cites = {0},
  citedby = {0},
  pages = {129-134},
  booktitle = {Proceedings of the 2008 International Symposium on Low Power Electronics and Design, 2008, Bangalore, India, August 11-13, 2008},
  editor = {Vijaykrishnan Narayanan and C. P. Ravikumar and Jörg Henkel and Ali Keshavarzi and Vojin G. Oklobdzija and Barry M. Pangrle},
  publisher = {ACM},
  isbn = {978-1-60558-109-5},
}