Qi Wang, Xiaomin Ren, Hui Huang, Yongqing Huang, Shiwei Cai. Growth of B::x::Ga::1-::::x::As, B::x::Al::1-::::x::As and B::x::Ga::1-::::x::::-::::y::In::y::As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition. Microelectronics Journal, 40(1):87-91, 2009. [doi]
@article{WangRHHC09,
title = {Growth of B::x::Ga::1-::::x::As, B::x::Al::1-::::x::As and B::x::Ga::1-::::x::::-::::y::In::y::As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition},
author = {Qi Wang and Xiaomin Ren and Hui Huang and Yongqing Huang and Shiwei Cai},
year = {2009},
doi = {10.1016/j.mejo.2008.06.066},
url = {http://dx.doi.org/10.1016/j.mejo.2008.06.066},
researchr = {https://researchr.org/publication/WangRHHC09},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {40},
number = {1},
pages = {87-91},
}