Growth of B::x::Ga::1-::::x::As, B::x::Al::1-::::x::As and B::x::Ga::1-::::x::::-::::y::In::y::As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition - researchr publication related

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Qi Wang, Xiaomin Ren, Hui Huang, Yongqing Huang, Shiwei Cai. Growth of B::x::Ga::1-::::x::As, B::x::Al::1-::::x::As and B::x::Ga::1-::::x::::-::::y::In::y::As epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition. Microelectronics Journal, 40(1):87-91, 2009. [doi]

The following publications are possibly variants of this publication:

LP-MOCVD growth of ternary B::x::Ga::1-::::x::As epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH::3::Qi Wang, Xiaomin Ren, Feihua Wang, Jianyou Feng, Jihe Lv, Jing Zhou, Shiwei Cai, Hui Huang, Yongqing Huang. mj, 39(12):1678-1682, 2008. [doi]

Heteroepitaxy of In::0.53::Ga::0.47::As on GaAs substrate by low pressure metalorganic chemical vapor deposition for the OEIC applicationsAiguang Ren, Xiaomin Ren, Qi Wang, Deping Xiong, Hui Huang, Yongqing Huang. mj, 37(8):700-704, 2006. [doi]

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3Sn(1 0 0) interfaceX. Y. Pang, Z. Q. Liu, S. Q. Wang, J. K. Shang. mr, 51(12):2330-2335, 2011. [doi]

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