Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs

Yang Wang, Chen Wang, Tao Chen, Hao Liu, Chinte Kuo, Ke Zhou, Binfeng Yin, Lin Chen, Qing-Qing Sun. Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-5, IEEE, 2020. [doi]

Abstract

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