Bo Wang, Chen Xue, Zhongyuan Feng, Zhaoyang Zhang, Han Liu, Lizheng Ren, Xiang Li, Anran Yin, Tianzhu Xiong, Yeyang Xue, Shengnan He, Yuyao Kong, Yongliang Zhou, An Guo, Xin Si, Jun Yang 0006. A 28nm Horizontal-Weight-Shift and Vertical-feature-Shift-Based Separate-WL 6T-SRAM Computation-in-Memory Unit-Macro for Edge Depthwise Neural-Networks. In IEEE International Solid- State Circuits Conference, ISSCC 2023, San Francisco, CA, USA, February 19-23, 2023. pages 134-135, IEEE, 2023. [doi]
Abstract is missing.