Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM - researchr publication authors

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Tian-Yu Wang, Lin-Jie Yu, Lin Chen, Hao Liu, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, Peng Zhou, David Wei Zhang. Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM. In Yajie Qin, Zhiliang Hong, Ting-Ao Tang, editors, 12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017. pages 203-206, IEEE, 2017. [doi]

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