Tian-Yu Wang, Lin-Jie Yu, Lin Chen, Hao Liu, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, Peng Zhou, David Wei Zhang. Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM. In Yajie Qin, Zhiliang Hong, Ting-Ao Tang, editors, 12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017. pages 203-206, IEEE, 2017. [doi]
@inproceedings{WangYCLZSDZZ17,
title = {Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM},
author = {Tian-Yu Wang and Lin-Jie Yu and Lin Chen and Hao Liu and Hao Zhu and Qing-Qing Sun and Shi-Jin Ding and Peng Zhou and David Wei Zhang},
year = {2017},
doi = {10.1109/ASICON.2017.8252447},
url = {https://doi.org/10.1109/ASICON.2017.8252447},
researchr = {https://researchr.org/publication/WangYCLZSDZZ17},
cites = {0},
citedby = {0},
pages = {203-206},
booktitle = {12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017},
editor = {Yajie Qin and Zhiliang Hong and Ting-Ao Tang},
publisher = {IEEE},
isbn = {978-1-5090-6625-4},
}