Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes

Chengsen Wang, Hao Yuan, Qingwen Song, XiaoYan Tang, Renxu Jia, YuMing Zhang, YiMen Zhang, Yidong Shen. Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes. In 2015 IEEE 11th International Conference on ASIC, ASICON 2015, Chengdu, China, November 3-6, 2015. pages 1-3, IEEE, 2015. [doi]

Abstract

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