Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs - researchr publication authors

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Chengxu Wang, Hao Yu, Yichen Wang, Zichong Zhang, Xiangshui Miao, Xingsheng Wang. Modeling and physical mechanism analysis of the effect of a polycrystalline-ferroelectric gate on FE-FinFETs. Science in China Series F: Information Sciences, 66(5), May 2023. [doi]

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