A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance

Bo Wang, Jun Zhou, Tony Tae-Hyoung Kim. A 0.4 V 12T 2RW dual-port SRAM with suppressed common-row-access disturbance. Microelectronics Journal, 69:78-85, 2017. [doi]

Abstract

Abstract is missing.