Capacitance characterization of tapered through-silicon-via considering MOS effect

Fengjuan Wang, Zhangming Zhu, Yintang Yang, Xiaoxian Liu, Ruixue Ding. Capacitance characterization of tapered through-silicon-via considering MOS effect. Microelectronics Journal, 45(2):205-210, 2014. [doi]

Abstract

Abstract is missing.