CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration

Hirobumi Watanabe, Shunsuke Ando, Hideyuki Aota, Masanori Dainin, Yong-Jin Chun, Kenji Taniguchi 0001. CMOS voltage reference based on gate work function differences in poly-Si controlled by conductivity type and impurity concentration. J. Solid-State Circuits, 38(6):987-994, 2003. [doi]

Abstract

Abstract is missing.