Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier - researchr publication authors

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Xiuqin Wei, Hiroo Sekiya, Shingo Kuroiwa, Tadashi Suetsugu, Marian K. Kazimierczuk. Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier. In International Symposium on Circuits and Systems (ISCAS 2010), May 30 - June 2, 2010, Paris, France. pages 3200-3203, IEEE, 2010. [doi]

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