Xiuqin Wei, Hiroo Sekiya, Shingo Kuroiwa, Tadashi Suetsugu, Marian K. Kazimierczuk. Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier. In International Symposium on Circuits and Systems (ISCAS 2010), May 30 - June 2, 2010, Paris, France. pages 3200-3203, IEEE, 2010. [doi]
@inproceedings{WeiSKSK10,
title = {Effect of MOSFET gate-to-drain parasitic capacitance on class-E power amplifier},
author = {Xiuqin Wei and Hiroo Sekiya and Shingo Kuroiwa and Tadashi Suetsugu and Marian K. Kazimierczuk},
year = {2010},
doi = {10.1109/ISCAS.2010.5537946},
url = {http://dx.doi.org/10.1109/ISCAS.2010.5537946},
tags = {e-science},
researchr = {https://researchr.org/publication/WeiSKSK10},
cites = {0},
citedby = {0},
pages = {3200-3203},
booktitle = {International Symposium on Circuits and Systems (ISCAS 2010), May 30 - June 2, 2010, Paris, France},
publisher = {IEEE},
}