Effect of oval defects in GaAs on the reliability of SiN::x:: metal-insulator-metal capacitors

P. J. van der Wel, J. R. de Beer, R. J. M. van Boxtel, Y. Y. Hsieh, Y. C. Wang. Effect of oval defects in GaAs on the reliability of SiN::x:: metal-insulator-metal capacitors. Microelectronics Reliability, 47(8):1188-1193, 2007. [doi]

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